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[IEEE 2017 75th Device Research Conference (DRC) - South Bend, IN, USA (2017.6.25-2017.6.28)] 2017 75th Annual Device Research Conference (DRC) - First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)
Ji, Dong, Gupta, Chirag, Agarwal, Anchal, Chan, Silvia H., Lund, Cory, Li, Wenwen, Laurent, Matthew A., Keller, Stacia, Mishra, Umesh K., Chowdhury, SrabantiYear:
2017
Language:
english
DOI:
10.1109/DRC.2017.7999442
File:
PDF, 311 KB
english, 2017