[IEEE 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, OH (2017.10.1-2017.10.5)] 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Analysis of false turn-on phenomenon of GaN HEMT with parasitic inductances for propose novel design method focusing on peak gate voltage
Ishiwaki, Seiya, Iwaki, Toshihiro, Sugihara, Yusuke, Nanamori, Kimihiro, Yamamoto, MasayoshiYear:
2017
Language:
english
DOI:
10.1109/ECCE.2017.8095953
File:
PDF, 2.39 MB
english, 2017