[IEEE 2017 IEEE Energy Conversion Congress and Exposition...

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[IEEE 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, OH (2017.10.1-2017.10.5)] 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Analysis of false turn-on phenomenon of GaN HEMT with parasitic inductances for propose novel design method focusing on peak gate voltage

Ishiwaki, Seiya, Iwaki, Toshihiro, Sugihara, Yusuke, Nanamori, Kimihiro, Yamamoto, Masayoshi
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Year:
2017
Language:
english
DOI:
10.1109/ECCE.2017.8095953
File:
PDF, 2.39 MB
english, 2017
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