Material Developments and Domain Wall-Based...

IEEE Transactions on Magnetics 2018 / 2 Vol. 54; Iss. 2

Material Developments and Domain Wall-Based Nanosecond-Scale Switching Process in Perpendicularly Magnetized STT-MRAM Cells

Devolder, Thibaut, Kim, Joo-Von, Swerts, J., Couet, S., Rao, S., Kim, W., Mertens, S., Kar, G., Nikitin, V.
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Volume:
54
Language:
english
Journal:
IEEE Transactions on Magnetics
DOI:
10.1109/TMAG.2017.2739187
Date:
February, 2018
File:
PDF, 1.37 MB
english, 2018
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