Scaling and Modeling of High Temperature 4H-SiC p-i-n...

IEEE Journal of the Electron Devices Society 2018 / 12 Vol. 6; Iss. 1

Scaling and Modeling of High Temperature 4H-SiC p-i-n Photodiodes

Hou, Shuoben, Hellstrom, Per-Erik, Zetterling, Carl-Mikael, Ostling, Mikael
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Volume:
6
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2017.2785618
Date:
December, 2018
File:
PDF, 2.18 MB
english, 2018
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