Resistive switching mechanism of ZnO/ZrO 2...

Japanese Journal of Applied Physics 2018 / 01 Vol. 57; Iss. 1

Resistive switching mechanism of ZnO/ZrO 2 -stacked resistive random access memory device annealed at 300 °C by sol–gel method with forming-free operation

Jian, Wen-Yi, You, Hsin-Chiang, Wu, Cheng-Yen
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.011501
Date:
January, 2018
File:
PDF, 1.55 MB
english, 2018
Conversion to is in progress
Conversion to is failed