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Selective growth of Ge 1− x Sn x epitaxial layer on patterned SiO 2 /Si substrate by metal–organic chemical vapor deposition
Takeuchi, Wakana, Washizu, Tomoya, Ike, Shinichi, Nakatsuka, Osamu, Zaima, ShigeakiVolume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.01AC05
Date:
January, 2018
File:
PDF, 981 KB
english, 2018