Investigations on the Nitride Interface Engineering at HfO2/Ge stacks for MOS devices
Venkata Rao, G., Kumar, M., Rajesh, T.V., Rama Koti Reddy, D.V., Anjaneyulu, D., Sainath, B., Jagadeesh Chandra, S.V.Volume:
5
Year:
2018
Language:
english
Journal:
Materials Today: Proceedings
DOI:
10.1016/j.matpr.2017.11.129
File:
PDF, 765 KB
english, 2018