[IEEE 2017 IEEE International Electron Devices Meeting...

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[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - TSV-free FinFET-based Monolithic 3D + -IC with computing-in-memory SRAM cell for intelligent IoT devices

Hsueh, Fu-Kuo, Chiu, Hsiao-Yun, Shen, Chang-Hong, Shieh, Jia-Min, Tang, Ying-Tsan, Yang, Chih-Chao, Chen, Hsiu-Chih, Huang, Wen-Hsien, Chen, Bo-Yuan, Chen, Kun-Ming, Huang, Guo-Wei, Chen, Wei-Hao, Hsu
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Year:
2017
DOI:
10.1109/IEDM.2017.8268380
File:
PDF, 466 KB
2017
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