[IEEE 2015 IEEE 11th International Conference on ASIC (ASICON ) - Chengdu, China (2015.11.3-2015.11.6)] 2015 IEEE 11th International Conference on ASIC (ASICON) - Study on maximum electric field modeling used for HCI induced degradation characteristic of LDMOS transistors
Higashino, Masashi, Aoki, Hitoshi, Tsukiji, Nobukazu, Kazumi, Masaki, Totsuka, Takuya, Kobayashi, HaruoYear:
2015
Language:
english
DOI:
10.1109/asicon.2015.7516945
File:
PDF, 334 KB
english, 2015