Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
HIROKI, Masanobu, MAEDA, Narihiko, SHIGEKAWA, NaoteruVolume:
E93-C
Year:
2010
Language:
english
Journal:
IEICE Transactions on Electronics
DOI:
10.1587/transele.e93.c.579
File:
PDF, 1.17 MB
english, 2010