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[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering

Hashemi, Pouya, Ando, Takashi, Cartier, Eduard A., Lee, Kam-Leung, Bruley, John, Lee, Choong-Hyun, Narayanan, Vijay
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Year:
2017
DOI:
10.1109/IEDM.2017.8268510
File:
PDF, 985 KB
2017
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