[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Computational study of gate-induced drain leakage in 2D-semiconductor field-effect transistors
Kang, Jiahao, Cao, Wei, Pal, Arnab, Pandey, Sumeet, Kramer, Steve, Hill, Richard, Sandhu, Gurtej, Banerjee, KaustavYear:
2017
DOI:
10.1109/IEDM.2017.8268479
File:
PDF, 1.17 MB
2017