[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - How to derive the highest mobility from 2D FETs — A first-principle study
Pal, Arnab, Cao, Wei, Kang, Jiahao, Banerjee, KaustavYear:
2017
DOI:
10.1109/IEDM.2017.8268480
File:
PDF, 1.02 MB
2017