Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas
Hirooka, Asumi, Habuka, Hitoshi, Kato, TomohisaVolume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.715
Date:
May, 2016
File:
PDF, 499 KB
english, 2016