Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film...

Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas

Hirooka, Asumi, Habuka, Hitoshi, Kato, Tomohisa
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Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.715
Date:
May, 2016
File:
PDF, 499 KB
english, 2016
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