Magnetoresistance and magnetization switching characteristics of magnetic tunnel junctions with amorphous CoFeSiB single and synthetic antiferromagnet free layers
Hwang, Jae Youn, Yim, Hae In, Kim, Mee Yang, Rhee, Jang Roh, Chun, Byong Sun, Kim, Young Keun, Kim, TaewanVolume:
99
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2176144
Date:
April, 2006
File:
PDF, 936 KB
english, 2006