Nanoscale MOSFET Modeling: Part 2: Using the Inversion...

IEEE Solid-State Circuits Magazine 2017 / 23 Vol. 9; Iss. 4

Nanoscale MOSFET Modeling: Part 2: Using the Inversion Coefficient as the Primary Design Parameter

Enz, Christian, Chicco, Francesco, Pezzotta, Alessandro
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Volume:
9
Language:
english
Journal:
IEEE Solid-State Circuits Magazine
DOI:
10.1109/MSSC.2017.2745838
Date:
November, 2017
File:
PDF, 3.27 MB
english, 2017
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