![](/img/cover-not-exists.png)
[IEEE 2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED) - Tinos, Greece (2017.8.29-2017.9.1)] 2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED) - Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC
Arvanitopoulos, A., Lophitis, N., Perkins, S., Gyftakis, K. N., Belanche Guadas, M., Antoniou, M.Year:
2017
Language:
english
DOI:
10.1109/demped.2017.8062411
File:
PDF, 336 KB
english, 2017