Depth Profile of Impurity Phase in Wide-Bandgap Cu(In1−x,Gax)Se2 Film Fabricated by Three-Stage Process
Wang, Shenghao, Nazuka, Takehiro, Hagiya, Hideki, Takabayashi, Yutaro, Ishizuka, Shogo, Shibata, Hajime, Niki, Shigeru, Islam, Muhammad M., Akimoto, Katsuhiro, Sakurai, TakeakiLanguage:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-018-6120-1
Date:
February, 2018
File:
PDF, 1.03 MB
english, 2018