A Closed Form Analytical Model of Back-Gated 2-D...

IEEE Journal of the Electron Devices Society 2018 Vol. 6; Iss. 1

A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors

Jiang, Chunsheng, Si, Mengwei, Liang, Renrong, Xu, Jun, Ye, Peide D., Alam, Muhammad Ashraful
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Volume:
6
Year:
2018
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2017.2787137
File:
PDF, 1005 KB
english, 2018
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