High-Mobility GeSn n-channel MOSFETs by Low-Temperature...

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IEEE Electron Device Letters 2018

High-Mobility GeSn n-channel MOSFETs by Low-Temperature Chemical Vapor Deposition and Microwave Annealing

Liu, Tzu-Hung, Chiu, Po-Yuan, Chuang, Yen, Liu, Chia-You, Shen, Chang-Hong, Luo, Guang-Li, Li, Jiun-Yun
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Year:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2808167
File:
PDF, 2.76 MB
english, 2018
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