Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs...

IEEE Transactions on Electron Devices 2018 / 2 Vol. 65; Iss. 2

Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability

Seoane, Natalia, Indalecio, Guillermo, Nagy, Daniel, Kalna, Karol, Garcia-Loureiro, Antonio J.
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Volume:
65
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2785325
Date:
February, 2018
File:
PDF, 3.09 MB
english, 2018
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