[IEEE 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Kamakura, Japan (2017.9.7-2017.9.9)] 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Nanoscale-nMOSFET junction design: Quantum transport approach
Pourghaderi, M. Ali, Park, Chulwoo, Kim, Jongchol, Jeong, Changwook, Chung, Won-Young, Lee, Keun-Ho, Park, Hong-Hyun, Pham, Anh-Tuan, Jin, Seonghoon, Choi, WoosungYear:
2017
Language:
english
DOI:
10.23919/SISPAD.2017.8085262
File:
PDF, 727 KB
english, 2017