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[IEEE 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Kamakura, Japan (2017.9.7-2017.9.9)] 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Timing and power fluctuations on gate-all-around nanowire CMOS circuit induced by various sources of random discrete dopants
Sung, Wen-Li, Chao, Pei-Jung, Li, YimingYear:
2017
Language:
english
DOI:
10.23919/SISPAD.2017.8085264
File:
PDF, 822 KB
english, 2017