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[IEEE 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Kamakura, Japan (2017.9.7-2017.9.9)] 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Novel experimentally calibrated multiphase TCAD model for cobalt germanide growth
Rabie, Mohamed A., Aden-Ali, Ishaq, Haddara, Yaser M.Year:
2017
Language:
english
DOI:
10.23919/SISPAD.2017.8085266
File:
PDF, 455 KB
english, 2017