[IEEE 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Kamakura, Japan (2017.9.7-2017.9.9)] 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - On electronic structure and geometry of MoX2 (X = S, Se, Te) and black phosphorus by ab initio Simulation with various van der waals corrections

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