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[IEEE 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Kamakura, Japan (2017.9.7-2017.9.9)] 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - TCAD simulation methodology for full 3-D electro-physical and advanced thermal analysis of power modules
Pribytny, Patrik, Chvala, Ales, Marek, Juraj, Donoval, DanielYear:
2017
Language:
english
DOI:
10.23919/sispad.2017.8085311
File:
PDF, 545 KB
english, 2017