Characterization of Screw Dislocations in a 4H-Silicon...

Materials Science Forum 2009 Vol. 615-617

Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography

Tanuma, Ryohei, Tamori, Tae, Yonezawa, Yoshiyuki, Yamaguchi, Hirotaka, Matsuhata, Hirofumi, Fukuda, Kenji, Arai, Kazuo
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Volume:
615-617
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.615-617.251
File:
PDF, 374 KB
english, 2009
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