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Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates
Van Hove, Marleen, Posthuma, Niels, Geens, Karen, Wellekens, Dirk, Li, Xiangdong, Decoutere, StefaanVolume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.04FG02
Date:
April, 2018
File:
PDF, 945 KB
english, 2018