Characterization of PECVD ultralow dielectric constant...

Journal of Physics D Applied Physics 2018 / 03 Vol. 51; Iss. 11

Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen

Ding, Zi-Jun, Wang, Yong-Ping, Liu, Wen-Jun, Ding, Shi-Jin, Baklanov, Mikhail R, Zhang, David Wei
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Volume:
51
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/aaae79
Date:
March, 2018
File:
PDF, 2.32 MB
english, 2018
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