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[IEEE ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC) - Leuven, Belgium (2017.9.11-2017.9.14)] 2017 47th European Solid-State Device Research Conference (ESSDERC) - Gated base structure for improved current gain in SiC bipolar technology
Malm, B. Gunnar, Elahipanah, Hossein, Salemi, Arash, Ostling, MikaelYear:
2017
Language:
english
DOI:
10.1109/essderc.2017.8066607
File:
PDF, 1.28 MB
english, 2017