Improvement of Charge Injection Using Ferroelectric Si:HfO...

IEEE Journal of the Electron Devices Society 2018 / 12 Vol. 6; Iss. 1

Improvement of Charge Injection Using Ferroelectric Si:HfO 2 As Blocking Layer in MONOS Charge Trapping Memory

Ji, Hao, Wei, Yehui, Zhang, Xinlei, Jiang, Ran
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Volume:
6
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2017.2785304
Date:
December, 2018
File:
PDF, 894 KB
english, 2018
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