High-Performance Normally Off p-GaN Gate HEMT With...

IEEE Journal of the Electron Devices Society 2018 Vol. 6; Iss. 1

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al 0.17 Ga 0.83 N/Al 0.3 Ga 0.7 N Barrier Layers Design

Chiu, Hsien-Chin, Chang, Yi-Sheng, Li, Bo-Hong, Wang, Hsiang-Chun, Kao, Hsuan-Ling, Hu, Chih-Wei, Xuan, Rong
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Volume:
6
Year:
2018
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2018.2789908
File:
PDF, 1.43 MB
english, 2018
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