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[IEEE 2017 International Symposium on Electronics and Smart Devices (ISESD) - Yogyakarta (2017.10.17-2017.10.19)] 2017 International Symposium on Electronics and Smart Devices (ISESD) - Study of tunneling gate oxide and floating gate thickness variation effects to the performance of split gate flash memory
Meliolla, Grasia, Surawijaya, Akhmadi, Sulthoni, M. Amin, Adiono, TrioYear:
2017
Language:
english
DOI:
10.1109/ISESD.2017.8253343
File:
PDF, 470 KB
english, 2017