Si 3 N 4...

IEEE Journal of the Electron Devices Society 2018 / 12 Vol. 6; Iss. 1

Si 3 N 4 /Al 2 O 3 Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances

Ding, Peng, Chen, Chen, Asif, Muhammad, Wang, Xi, Niu, Jiebin, Yang, Feng, Ding, Wuchang, Su, Yongbo, Wang, Dahai, Jin, Zhi
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Volume:
6
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2017.2765349
Date:
December, 2018
File:
PDF, 1.32 MB
english, 2018
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