Intrinsic microstructure of Si/GaAs heterointerfaces...

Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature

Ohno, Yutaka, Yoshida, Hideto, Takeda, Seiji, Liang, Jianbo, Shigekawa, Naoteru
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Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.02BA01
Date:
February, 2018
File:
PDF, 595 KB
english, 2018
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