[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Crystal-oriented black phosphorus TFETs with strong band-to-band-tunneling anisotropy and subthreshold slope nearing the thermionic limit
Robbins, Matthew C., Koester, Steven J.Year:
2017
Language:
english
DOI:
10.1109/IEDM.2017.8268399
File:
PDF, 1.06 MB
english, 2017