Low polarisation dependence (< 0.3 dB) in an EA...

Electronics Letters 1995 / 02 Vol. 31; Iss. 3

Low polarisation dependence (< 0.3 dB) in an EA modulator using a polyimide-buried high-mesa ridge structure with an InGaAsP bulk absorption layer

Matsui, Y., Ogawa, Y., Yamada, K., Murai, H., Nakamura, K.
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Volume:
31
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19950115
Date:
February, 1995
File:
PDF, 220 KB
english, 1995
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