Nanoscale structural and chemical analysis of F-implanted...

Journal of Applied Physics 2018 / 01 Vol. 123; Iss. 2

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

Tang, Fengzai, Lee, Kean B., Guiney, Ivor, Frentrup, Martin, Barnard, Jonathan S., Divitini, Giorgio, Zaidi, Zaffar H., Martin, Tomas L., Bagot, Paul A., Moody, Michael P., Humphreys, Colin J., Housto
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Volume:
123
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5006255
Date:
January, 2018
File:
PDF, 2.68 MB
english, 2018
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