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[IEEE 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Chengdu, China (2017.7.4-2017.7.7)] 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - LDMOST gate oxide breakdown prediction under realistic RF power application conditions
Tao, Guoqiao, van Nederveen, Sjoerd, de Vaan, MarioYear:
2017
Language:
english
DOI:
10.1109/IPFA.2017.8060122
File:
PDF, 408 KB
english, 2017