[IEEE 2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) - Batu Ferringhi, Penang, Malaysia (2017.8.23-2017.8.25)] 2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) - The influence of shallow trench isolation angle on hot carrier effect of STI-based LDMOS transistors
Alimin, A. F. M., Hizamul-din, H. H., Hatta, S. F. W. M., Soin, N.Year:
2017
Language:
english
DOI:
10.1109/RSM.2017.8069149
File:
PDF, 399 KB
english, 2017