Design and Characterization of a Silicon Photomultiplier in...

IEEE Journal of the Electron Devices Society 2018 / 12 Vol. 6; Iss. 1

Design and Characterization of a Silicon Photomultiplier in 0.35- ${\mu }\text{m}$ CMOS

D'Ascenzo, Nicola, Brockherde, Werner, Dreiner, Stefan, Schwinger, Alexander, Schmidt, Andrei, Xie, Qingguo
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Volume:
6
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2017.2771145
Date:
December, 2018
File:
PDF, 960 KB
english, 2018
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