High-Uniformity and High Drain Current Density...

IEEE Journal of the Electron Devices Society 2018 / 12 Vol. 6; Iss. 1

High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET

Wang, Yuangang, Lv, Yuanjie, Zhou, Xingye, Yin, Jiayun, Han, Tingting, Gu, Guodong, Song, Xubo, Tan, Xin, Dun, Shaobo, Guo, Hongyu, Fang, Yulong, Feng, Zhihong, Cai, Shujun
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Volume:
6
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2017.2778087
Date:
December, 2018
File:
PDF, 1.14 MB
english, 2018
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