Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant
Matsuoka, Hirofumi, Kanahashi, Kaito, Tanaka, Naoki, Shoji, Yoshiaki, Li, Lain-Jong, Pu, Jiang, Ito, Hiroshi, Ohta, Hiromichi, Fukushima, Takanori, Takenobu, TaishiVolume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.02CB15
Date:
February, 2018
File:
PDF, 1.35 MB
english, 2018