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Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance–voltage characteristics
Wei, Xixiong, Deng, Wanling, Fang, Jielin, Ma, Xiaoyu, Huang, JunkaiVolume:
80
Language:
english
Journal:
The European Physical Journal Applied Physics
DOI:
10.1051/epjap/2017170179
Date:
October, 2017
File:
PDF, 972 KB
english, 2017