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Tunneling magnetoresistance of magnetic tunneling junction cell measured by conducting atomic force microscopy with ramping dc bias voltage rate
Shu, Min-Fong, Canizo-Cabrera, A., Hsu, Chih-Cheng, Chen, C. C., Wu, J. C., Li, Simon C., Yang, Chao-Chen, Wu, Te-hoVolume:
99
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2177567
Date:
April, 2006
File:
PDF, 546 KB
english, 2006