A Charge-Based Capacitance Model for Double-Gate Tunnel...

IEEE Transactions on Electron Devices 2018 / 1 Vol. 65; Iss. 1

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

Lu, Bin, Lu, Hongliang, Zhang, Yuming, Zhang, Yimen, Cui, Xiaoran, Lv, Zhijun, Yang, Shizheng, Liu, Chen
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Volume:
65
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2775341
Date:
January, 2018
File:
PDF, 3.09 MB
english, 2018
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