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IEEE Transactions on Electron Devices 2018

Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT

Hao, Ronghui, Xu, Ning, Yu, Guohao, Song, Liang, Chen, Fu, Zhao, Jie, Deng, Xuguang, Li, Xiang, Cheng, Kai, Fu, Kai, Cai, Yong, Zhang, Xinping, Zhang, Baoshun
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Year:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2803521
File:
PDF, 1.67 MB
english, 2018
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