[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Characterization of HfO2/Al2O3 gate dielectric nanometer-stacks grown by atomic layer deposition on InAlAs substrates

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