A study of the effect of electron and proton irradiation on...

Technical Physics Letters 2017 / 11 Vol. 43; Iss. 11

A study of the effect of electron and proton irradiation on 4H-SiC device structures

Lebedev, A. A., Davydovskaya, K. S., Yakimenko, A. N., Strel’chuk, A. M., Kozlovskii, V. V.
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Volume:
43
Language:
english
Journal:
Technical Physics Letters
DOI:
10.1134/S1063785017110256
Date:
November, 2017
File:
PDF, 236 KB
english, 2017
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