A New Method of Obtaining an n–p-Structure on the Basis of...

Russian Physics Journal 2018 / 2 Vol. 60; Iss. 10

A New Method of Obtaining an n–p-Structure on the Basis of the Defective Semiconductor AgIn5S8

Guseinov, A. G., Salmanov, V. M., Mamedov, R. M., Dzhabrailova, R., Magomedov, A. Z.
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Volume:
60
Language:
english
Journal:
Russian Physics Journal
DOI:
10.1007/s11182-018-1277-x
Date:
February, 2018
File:
PDF, 150 KB
english, 2018
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